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Search: "[ keyword: Silicon carbide (SiC) MOSFET ]" (1)
Influence of Device Parameters Spread on Current Distribution of Paralleled Silicon Carbide MOSFETs
Junji Ke  Zhibin Zhao  Peng Sun  Huazhen Huang  James Abuogo 
Xiang Cui
Vol. 19, No. 4, pp. 1054-1067, Jul. 2019
10.6113/JPE.2019.19.4.1054

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  ISSN : 1598 - 2092
eISSN : 2093 - 4718